MOSFET N-CH 60V 23A/135A TDSON-8
沟道N 沟道
耐压60 V
连续漏极电流23 ~ 135 A
导通电阻2.8 mΩ
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沟道N 沟道
耐压60 V
连续漏极电流23 ~ 135 A
导通电阻2.8 mΩ最大 · 50A
阈值电压2.3 V最大 · 38μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 135A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3W (Ta), 100W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TDSON-8 |
| 其他 | |
| Base Product Number | ISC0702N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 30 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 50A, 10V |
| Series | OptiMOS™ 5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 38µA |
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