ISC0703NLSATMA1

ISC0703NLSATMA1

在产晶体管 - FET,MOSFET - 单

MOSFET N-CH 60V 13A/57A TDSON-8

沟道N 沟道
耐压60 V
连续漏极电流13 ~ 57 A
导通电阻6.9 mΩ

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流13 ~ 57 A
导通电阻6.9 mΩ最大 · 32A
阈值电压2.3 V最大 · 15μA
电源
Current - Continuous Drain (Id) @ 25°C13A (Ta), 57A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3W (Ta), 44W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
其他
Base Product NumberISC0703N
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 30 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs6.9mOhm @ 32A, 10V
SeriesOptiMOS™ 5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 15µA

器件图片

技术资料