ISC0804NLSATMA1

ISC0804NLSATMA1

单 FET,MOSFET

MOSFET N-CH 100V 12A/59A TDSON-8

沟道N 沟道
耐压100 V
连续漏极电流12 ~ 59 A
导通电阻10.9 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流12 ~ 59 A
导通电阻10.9 mΩ最大 · 20A
阈值电压2.3 V最大 · 28μA
电源
Current - Continuous Drain (Id) @ 25°C12A (Ta), 59A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.5W (Ta), 60W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
其他
Base Product NumberISC0804N
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 50 V
MfrInfineon Technologies
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusObsolete
Rds On (Max) @ Id, Vgs10.9mOhm @ 20A, 10V
Series448
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 28µA

器件图片

技术资料