沟道N 沟道
耐压200 V
连续漏极电流60 A
导通电阻33 mΩ
全部替代型号
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技术参数
沟道N 沟道
耐压200 V
连续漏极电流60 A
导通电阻33 mΩ最大 · 30A
阈值电压4 V最大 · 4mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 230W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | ISOPLUS220™ |
| Supplier Device Package | ISOPLUS220™ |
| 其他 | |
| Base Product Number | IXFC60N20 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 30A, 10V |
| Series | HiPerFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
器件图片
技术资料
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