IXYS美国

IXFN140N30P

在产晶体管 - FET,MOSFET - 单SOT-227B

MOSFET N-CH 300V 110A SOT-227B

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沟道N 沟道
耐压300 V
连续漏极电流110 A
导通电阻24 mΩ

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技术参数

沟道N 沟道
耐压300 V
连续漏极电流110 A
导通电阻24 mΩ最大 · 70A
阈值电压5 V最大 · 8mA
电源
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)700W (Tc)
环境与封装
Mounting TypeChassis Mount
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B
其他
Base Product NumberIXFN140
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14800 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs24mOhm @ 70A, 10V
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 8mA

技术资料