IXYS美国
MOSFET N-CH 1200V 32A SOT-227B
沟道N 沟道
耐压1.2 kV
连续漏极电流32 A
导通电阻350 mΩ
全部替代型号
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技术参数
沟道N 沟道
耐压1.2 kV
连续漏极电流32 A
导通电阻350 mΩ最大 · 500mA
阈值电压5 V最大 · 8mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 32A |
| Drain to Source Voltage (Vdss) | 1200 V |
| 环境与封装 | |
| Mounting Type | Chassis Mount |
| Package | Box |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227B |
| 其他 | |
| Base Product Number | IXFN32 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15900 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 500mA, 10V |
| Series | HiPerFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |