IXTH20N50D
IXYS美国

IXTH20N50D

不推荐用于新设计晶体管 - FET,MOSFET - 单TO-247

MOSFET N-CH 500V 20A TO247

沟道N 沟道
耐压500 V
连续漏极电流20 A
导通电阻330 mΩ

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流20 A
导通电阻330 mΩ最大 · 10A
电源
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)400W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)
其他
Base Product NumberIXTH20
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 25 V
MfrIXYS
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs330mOhm @ 10A, 10V
SeriesDepletion
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id-

器件图片

技术资料