IXTH26N60P
IXYS美国

IXTH26N60P

在产晶体管 - FET,MOSFET - 单TO-247

MOSFET N-CH 600V 26A TO247

沟道N 沟道
耐压600 V
连续漏极电流26 A
导通电阻270 mΩ

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流26 A
导通电阻270 mΩ最大 · 500mA
阈值电压5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)460W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)
其他
Base Product NumberIXTH26
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4150 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs270mOhm @ 500mA, 10V
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

器件图片

技术资料