IXTH26P20P
IXYS美国

IXTH26P20P

在产晶体管 - FET,MOSFET - 单TO-247

MOSFET P-CH 200V 26A TO247

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沟道P 沟道
耐压200 V
连续漏极电流26 A
导通电阻170 mΩ

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技术参数

沟道P 沟道
耐压200 V
连续漏极电流26 A
导通电阻170 mΩ最大 · 13A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~175°C(TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)
其他
Base Product NumberIXTH26
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2740 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs170mOhm @ 13A, 10V
SeriesPolarP™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料