全部替代型号
查看完整报告已收录 21 个替代型号，其中国产替代 1 个，登录后查看。
技术参数
沟道N 沟道
耐压650 V
连续漏极电流12 A
导通电阻300 mΩ最大 · 6A
阈值电压4.5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 40W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package | TO-220 Isolated Tab |
| 其他 | |
| Base Product Number | IXTP12 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6A, 10V |
| Series | Ultra X2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |