IXTP32P05T
IXYS美国

IXTP32P05T

在产晶体管 - FET,MOSFET - 单TO-220-3

MOSFET P-CH 50V 32A TO220AB

问 AI FAE数据手册 PDF
沟道P 沟道
耐压50 V
连续漏极电流32 A
导通电阻39 mΩ

全部替代型号

查看完整报告

技术参数

沟道P 沟道
耐压50 V
连续漏极电流32 A
导通电阻39 mΩ最大 · 500mA
阈值电压4.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)83W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberIXTP32
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1975 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs39mOhm @ 500mA, 10V
SeriesTrenchP™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id4.5V @ 250µA

器件图片

技术资料