IXYS美国

IXTP48N20TM

在产晶体管 - FET,MOSFET - 单TO-220 Isolated Tab

MOSFET N-CH 200V 48A TO220

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沟道N 沟道
耐压200 V
连续漏极电流48 A
导通电阻50 mΩ

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技术参数

沟道N 沟道
耐压200 V
连续漏极电流48 A
导通电阻50 mΩ最大 · 24A
阈值电压4.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)250W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~175°C(TJ)
PackageTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Supplier Device PackageTO-220 Isolated Tab
其他
Base Product NumberIXTP48
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3090 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs50mOhm @ 24A, 10V
SeriesTrench
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 250µA

技术资料

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