IXTP60N20T

IXTP60N20T

单 FET,MOSFETTO-220-3

MOSFET N-CH 200V 60A TO220AB

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沟道N 沟道
耐压200 V
连续漏极电流60 A
导通电阻40 mΩ

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技术参数

沟道N 沟道
耐压200 V
连续漏极电流60 A
导通电阻40 mΩ最大 · 30A
阈值电压5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)500W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberIXTP60
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4530 pF @ 25 V
MfrLittelfuse Inc.
PackagingTube
Part StatusActive
Rds On (Max) @ Id, Vgs40mOhm @ 30A, 10V
SeriesTrench
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

器件图片

技术资料