IXTY08N100P
IXYS美国

IXTY08N100P

在产晶体管 - FET,MOSFET - 单TO-252AA

MOSFET N-CH 1000V 800MA TO252

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沟道N 沟道
耐压1 kV
连续漏极电流800 mA
导通电阻20 Ω

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技术参数

沟道N 沟道
耐压1 kV
连续漏极电流800 mA
导通电阻20 Ω最大 · 500mA
阈值电压4 V最大 · 50μA
电源
Current - Continuous Drain (Id) @ 25°C800mA (Tc)
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)42W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
其他
Base Product NumberIXTY08
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs20Ohm @ 500mA, 10V
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 50µA

器件图片

技术资料