沟道N 沟道
耐压1 kV
连续漏极电流2 A
导通电阻7.5 Ω
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技术参数
沟道N 沟道
耐压1 kV
连续漏极电流2 A
导通电阻7.5 Ω最大 · 500mA
阈值电压4.5 V最大 · 100μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 86W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
| 其他 | |
| Base Product Number | IXTY2 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 655 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 500mA, 10V |
| Series | Polar |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
器件图片
技术资料
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