IXTY4N60P
IXYS美国

IXTY4N60P

停产晶体管 - FET,MOSFET - 单TO-252AA

MOSFET N-CH 600V 4A TO252

沟道N 沟道
耐压600 V
连续漏极电流4 A
导通电阻2 Ω

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流4 A
导通电阻2 Ω最大 · 2A
阈值电压5.5 V最大 · 100μA
电源
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)89W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
其他
Base Product NumberIXTY4
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds635 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs2Ohm @ 2A, 10V
SeriesPolarHV™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 100µA

器件图片

技术资料