类型NPN
集射极耐压30 V
集电极电流1 A
放大倍数 hFE200
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类型NPN
集射极耐压30 V
集电极电流1 A最大
放大倍数 hFE200100mA
功率800 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 1 A |
| Power - Max | 800 mW |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
| Frequency - Transition | 130MHz |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C(TJ) |
| Package | Cut Tape (CT); Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| 其他 | |
| Base Product Number | KSD471 |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |