江苏矽莱克 SIRECTIFIER MBR10200CT，High Tjm Low IRRM Schottky Barrier Diodes，封装 TO-220AB
全部替代型号
查看完整报告技术参数
| IFAV (A) | 10 |
| IFSM (A) | 120 |
| IR at VR=VRRM 125°C (mA) | 15 |
| IR at VR=VRRM 25°C (μA) | 0.05 |
| VFmax at IF (A) | 5 |
| VFmax at IF (V) | 0.95 |
| VR=VRRM (V) | 200 |
江苏矽莱克 SIRECTIFIER MBR10200CT，High Tjm Low IRRM Schottky Barrier Diodes，封装 TO-220AB
| IFAV (A) | 10 |
| IFSM (A) | 120 |
| IR at VR=VRRM 125°C (mA) | 15 |
| IR at VR=VRRM 25°C (μA) | 0.05 |
| VFmax at IF (A) | 5 |
| VFmax at IF (V) | 0.95 |
| VR=VRRM (V) | 200 |