onsemi美国

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C4.1A, 3A
Drain to Source Voltage (Vdss)30V
Power - Max2W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberMMDF2
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds630pF @ 24V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs70mOhm @ 3A, 10V
Series-
Vgs(th) (Max) @ Id3V @ 250µA

技术资料

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