onsemi美国

MOSFET 2N-CH 40V 3.4A 8-SOIC

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C3.4A
Drain to Source Voltage (Vdss)40V
Power - Max1.39W
环境与封装
Mounting TypeSurface Mount
PackageCut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberMMDF3
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 32V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs80mOhm @ 3.4A, 10V
Series-
Vgs(th) (Max) @ Id3V @ 250µA

技术资料