类型PNP
集射极耐压60 V
集电极电流500 mA
放大倍数 hFE50
全部替代型号
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技术参数
类型PNP
集射极耐压60 V
集电极电流500 mA最大
放大倍数 hFE50250mA
功率1 W最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 500 mA |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA, 1V |
| Frequency - Transition | 50MHz |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | TO-92 (TO-226) |
| 其他 | |
| Base Product Number | MPSW55 |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA |
器件图片
技术资料
该型号暂未收录资料。