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| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 251A (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Power - Max | 1.042kW (Tc) |
| 环境与封装 | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C~175°C(TJ) |
| Package | Bulk |
| Package / Case | Module |
| Supplier Device Package | - |
| 其他 | |
| FET Feature | Silicon Carbide (SiC) |
| FET Type | 4 N-Channel (Full Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 696nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000pF @ 1000V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 120A, 20V |
| Series | - |
| Vgs(th) (Max) @ Id | 2.8V @ 9mA |