<p>Phase‑Leg HV‑D3 mSiC modules with integrated anti‑parallel mSiC SBDs combine a high‑side and low‑side SiC MOSFET pair with fast, low‑loss freewheeling paths optimized for high‑voltage operation. The inclusion of an mSiC Schottky Barrier Diode reduces reverse recovery losses, minimizes ringing during commutation and improves switching efficiency compared to MOSFET body‑diode conduction. The low‑inductance D3 package further supports fast, clean switching and predictable high‑frequency performance.</p><p>These Phase‑Leg modules are designed as scalable building blocks for three‑phase inverters, motor drives, traction systems and grid‑connected converters where efficiency and reliability are critical. By integrating the anti‑parallel SBD, designers can simplify system design, reduce EMI risk and improve thermal margins under hard‑switching conditions. This topology supports our system‑level approach, enabling higher efficiency, consistent phase behavior and accelerated time to market in industrial, energy, and transportation applications.</p>
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| 电源 | |
|---|---|
| Current A (ampere) | 151 |
| 交流 / 直流特性 | |
| Fall Time tF ns (nanosecond) | 65 |
| Rise Time tR ns (nanosecond) | 40 |
| 环境与封装 | |
| MaxOperatingJunctionTemp | 175 |
| 其他 | |
| Configuration | Phase leg |
| Driver Type | SiC MOSFET |
| PKG | HV-D3 |
| RDSon (mΩ) typ | 13.5 |
| Silicon Type | SiC MOSFET |
| Total Gate Charge (nC) | 820 |
| VDSS (V) | 3300 |