类型DRAM
容量2 Gbit
接口并口
供电电压1.283 ~ 1.45 V
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类型DRAM
容量2 Gbit
接口并口
供电电压1.283 ~ 1.45 V
| 电源 | |
|---|---|
| Voltage - Supply | 1.283V ~ 1.45V |
| 环境与封装 | |
| Memory Size | 2Gbit |
| Mounting Type | - |
| Operating Temperature | 0°C~95°C(TC) |
| Package | Bulk |
| Package / Case | - |
| Supplier Device Package | - |
| 其他 | |
| Base Product Number | MT41K256M8 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 256M x 8 |
| Memory Type | Volatile |
| Mfr | Micron Technology Inc. |
| Product Status | Obsolete |
| Series | - |
| Technology | SDRAM - DDR3L |
| Write Cycle Time - Word, Page | - |
技术资料
该型号暂未收录资料。