NTMFS4826NET1G
onsemi美国

NTMFS4826NET1G

停产晶体管 - FET,MOSFET - 单5-DFN

MOSFET N-CH 30V 9.5A/66A 5DFN

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沟道N 沟道
耐压30 V
连续漏极电流9.5 ~ 66 A
导通电阻5.9 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流9.5 ~ 66 A
导通电阻5.9 mΩ最大 · 30A
阈值电压2.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 66A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Power Dissipation (Max)870mW (Ta), 41.7W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-40°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFN (5x6) (8-SOFL)
其他
Base Product NumberNTMFS4
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1850 pF @ 12 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs5.9mOhm @ 30A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

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技术资料

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