MOSFET P-CH 12V 3.5A TUMT6

沟道P 沟道
耐压12 V
连续漏极电流3.5 A
导通电阻42 mΩ

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技术参数

沟道P 沟道
耐压12 V
连续漏极电流3.5 A
导通电阻42 mΩ最大 · 3.5A
阈值电压1 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Power Dissipation (Max)1W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case6-SMD, Flat Leads
Supplier Device PackageTUMT6
其他
Base Product NumberRAL035
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 6 V
MfrRohm Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs42mOhm @ 3.5A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-8V
Vgs(th) (Max) @ Id1V @ 1mA

技术资料