RFD10P03LSM
onsemi美国

RFD10P03LSM

停产单 FET,MOSFETTO-252AA

MOSFET P-CH 30V 10A TO252-3

问 AI FAE数据手册 PDF
沟道P 沟道
耐压30 V
连续漏极电流10 A
导通电阻200 mΩ

全部替代型号

查看完整报告

技术参数

沟道P 沟道
耐压30 V
连续漏极电流10 A
导通电阻200 mΩ最大 · 10A
阈值电压2 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drain to Source Voltage (Vdss)30 V
环境与封装
Mounting TypeSurface Mount
PackageTube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
其他
Base Product NumberRFD10
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1035 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs200mOhm @ 10A, 5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

器件图片

技术资料