onsemi美国
MOSFET N-CH 60V 12A IPAK
沟道N 沟道
耐压60 V
连续漏极电流12 A
导通电阻150 mΩ
全部替代型号
查看完整报告技术参数
沟道N 沟道
耐压60 V
连续漏极电流12 A
导通电阻150 mΩ最大 · 12A
阈值电压4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 53W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | I-PAK |
| 其他 | |
| Base Product Number | RFD30 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 12A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |