RRL035P03FRATR

在产晶体管 - FET,MOSFET - 单

MOSFET P-CH 30V 3.5A TUMT6

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沟道P 沟道
耐压30 V
连续漏极电流3.5 A
导通电阻50 mΩ

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技术参数

沟道P 沟道
耐压30 V
连续漏极电流3.5 A
导通电阻50 mΩ最大 · 3.5A
阈值电压2.5 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Power Dissipation (Max)1W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case6-SMD, Flat Leads
Supplier Device PackageTUMT6
其他
Base Product NumberRRL035
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 10 V
MfrRohm Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs50mOhm @ 3.5A, 10V
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

技术资料

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