onsemi美国

MOSFET 2N-CH 50V 2A 8-SOIC

全部替代型号

查看完整报告

已收录 1 个替代型号,登录后查看。

技术参数

电源
Current - Continuous Drain (Id) @ 25°C2A
Drain to Source Voltage (Vdss)50V
Power - Max2W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberSSD2007
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs300mOhm @ 1.5A, 10V
Series-
Vgs(th) (Max) @ Id4V @ 250µA

技术资料