SSM2275

在产音频放大器8-Lead Narrow Body SOIC

The SSM2275 and SSM2475 use the Butler Amplifier front end, which combines both bipolar and FET transistors to offer the accuracy and low noise performance of bipolar transistors and the slew rates and sound quality of FETs. This product family includes dual and quad rail-to-rail output audio amplifiers that achieve lower production costs than the industry standard OP275 (the first Butler Amplifier offered by Analog Devices). This lower cost amplifier also offers operation from a single 5 V supply, in addition to conventional ±15 V supplies. The ac performance meets the needs of the most demanding audio applications, with 8 MHz bandwidth, 12 V/µs slew rate and extremely low distortion.

SSM2275是一款双通道轨到轨输出音频放大器，采用Butler前端，支持单5V或双±15V供电，带宽8MHz，压摆率12V/µs，低噪声低失真，提供SOIC、DIP和microSOIC封装。规格书核对

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23 项

参数	值和测试条件	出处
封装	8-Lead Narrow Body SOIC (SO-8), 8-Lead Plastic DIP (N-8), 8-Lead microSOIC (RM-8)
工作温度	-40°C < TA < +85°C
推荐工作条件	VS = ±15 V, TA = +25°C, VCM = 0 V; VS = +5 V, TA = +25°C, VCM = 2.5 V
绝对最大额定值	Supply Voltage (VS): ±18 V; Input Voltage (VIN): ±15 V; Differential Input Voltage: ±15 V; Storage Temperature Range: -65°C < TS < +150°C; Junction Temperature Range: -65°C < TS < +150°C; Lead Temperature Range (Soldering, 60 sec): +300°C; ESD Susceptibility: 2,000 V
电源电压	Single or Dual-Supply Operation; Single 5 V supply or conventional ± 15 V supplies
输出电流	High Output Current: 650 mA; Output stage can sink or source up to 50 mA
静态电流	Typ 1.7 mA, Max 2.9 mA (VO = 0 V, VS = ±15 V, TA = +25°C); Typ 1.75 mA, Max 3.0 mA (-40°C ≤ TA ≤ +85°C)
带宽	Typ 8 MHz (VS = ±15 V); Typ 6 MHz (VS = +5 V, RL = 2 kΩ \|\| 10 pF)
压摆率	Min 9 V/µs, Typ 12 V/µs (RL = 2 kΩ \|\| 50 pF, VS = ±15 V); Typ 12 V/µs (VS = +5 V)
总谐波失真	Typ 0.0006% (RL = 10 kΩ, f = 1 kHz, VO = 1 VRMS)
电压噪声密度	Typ 8 nV/√Hz (f > 1 kHz); Low Noise: 7 nV/√Hz
输入失调电压	Typ 1 mV, Max 4 mV (TA = +25°C); Typ 1 mV, Max 6 mV (-40°C ≤ TA ≤ +85°C)
输入偏置电流	Typ 250 nA, Max 400 nA (TA = +25°C); Typ 300 nA, Max 500 nA (-40°C ≤ TA ≤ +85°C)
共模抑制比	Min 80 dB, Typ 100 dB (-12.5 V ≤ VCM ≤ +12.5 V, VS = ±15 V); Min 25 V/mV, Typ 60 V/mV (RL = 2 kΩ, -0.5 V ≤ VO ≤ +4.5 V, VS = +5 V)
电源抑制比	Min 85 dB, Typ 110 dB (±2.5 V ≤ VS ≤ ±18 V, TA = +25°C); Min 80 dB, Typ 105 dB (-40°C ≤ TA ≤ +85°C)
输出高电平电压	Min 14 V, Typ 14.5 V (IL ≤ 20 mA, VS = ±15 V); Min 4.2 V, Typ 4.5 V (IL ≤ -15 mA, VS = +5 V)
输出低电平电压	Typ -14 V, Max -13.5 V (IL = 20 mA, VS = ±15 V); Typ 0.6 V, Max 1.0 V (IL ≤ -15 mA, VS = +5 V)
短路电流限制	Min ±25 mA, Typ ±50 mA, Max ±75 mA (-40°C ≤ TA ≤ +85°C, VS = ±15 V); Typ 40 mA (VS = +5 V)
通道隔离度	Typ 128 dB (RL = 2 kΩ, f = 1 kHz)
输入电压范围	Min -14 V, Max +14 V (VS = ±15 V); Min 0.3 V, Max 4.7 V (VS = +5 V)
热阻	θJA: 158 °C/W (8-Lead SOIC), 206 °C/W (8-Lead microSOIC), 103 °C/W (8-Lead Plastic DIP); θJC: 43 °C/W (8-Lead SOIC/microSOIC/DIP)
稳定性	Unity Gain Stable; Stable even when driving capacitive loads
保护功能	Input Overvoltage Protection; Output is not short-circuit protected (external resistor recommended to limit current to ±40 mA)

引脚与封装

封装：**8-Lead Narrow Body SOIC (SO-8), 8-Lead Plastic DIP (N-8), 8-Lead microSOIC (RM-8)**

脚位	名称	功能
1	OUT	A (A通道输出)
2		-IN A (A通道反相输入)
3		+IN A (A通道同相输入)
4	V-	(负电源)
5		+IN B (B通道同相输入)
6		-IN B (B通道反相输入)
7	OUT	B (B通道输出)
8	V+	(正电源)

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