STGP4M65DF2

STGP4M65DF2

在产晶体管 - IGBT - 单

IGBT M SERIES 650V 4A LOW LOSS

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技术参数

电源
Current - Collector (Ic) (Max)8 A
Current - Collector Pulsed (Icm)16 A
Power - Max68 W
Voltage - Collector Emitter Breakdown (Max)650 V
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~175°C(TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
其他
Base Product NumberSTGP4
Gate Charge15.2 nC
IGBT TypeTrench Field Stop
Input TypeStandard
MfrSTMicroelectronics
Product StatusActive
Reverse Recovery Time (trr)133 ns
SeriesM
Switching Energy40µJ (on), 136µJ (off)
Td (on/off) @ 25°C12ns/86ns
Test Condition400V, 4A, 47Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A

器件图片

技术资料