STGP6M65DF2

STGP6M65DF2

在产晶体管 - IGBT - 单

TRENCH GATE FIELD-STOP IGBT M SE

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技术参数

电源
Current - Collector (Ic) (Max)12 A
Current - Collector Pulsed (Icm)24 A
Power - Max88 W
Voltage - Collector Emitter Breakdown (Max)650 V
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~175°C(TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
其他
Base Product NumberSTGP6
Gate Charge21.2 nC
IGBT TypeTrench Field Stop
Input TypeStandard
MfrSTMicroelectronics
Product StatusActive
Reverse Recovery Time (trr)140 ns
SeriesM
Switching Energy40µJ (on), 136µJ (off)
Td (on/off) @ 25°C12ns/86ns
Test Condition400V, 6A, 22Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 6A

器件图片

技术资料