STL8P4LLF6

在产单 FET,MOSFET

MOSFET P-CH 40V POWERFLAT

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沟道P 沟道
耐压40 V
连续漏极电流8 A
导通电阻20.5 mΩ

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技术参数

沟道P 沟道
耐压40 V
连续漏极电流8 A
导通电阻20.5 mΩ最大 · 4A
阈值电压2.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C8A (Tj)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.9W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (3.3x3.3)
其他
Base Product NumberSTL8
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2850 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs20.5mOhm @ 4A, 10V
SeriesSTripFET™ F6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

技术资料