类型PNP
集射极耐压60 V
集电极电流2 A
放大倍数 hFE1000
全部替代型号
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技术参数
类型PNP
集射极耐压60 V
集电极电流2 A最大
放大倍数 hFE10001A
功率2 W最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 2mA |
| Current - Collector (Ic) (Max) | 2 A |
| Power - Max | 2 W |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 4V |
| Frequency - Transition | - |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| 其他 | |
| Base Product Number | TIP115 |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A |
技术资料
该型号暂未收录资料。