TLE2027AM

The TLE20x7 and TLE20x7A contain innovative circuit design expertise and high-quality process control techniques to produce a level of ac performance and dc precision previously unavailable in single operational amplifiers. Manufactured using Texas Instruments state-of-the-art Excalibur process, these devices allow upgrades to systems that use lower-precision devices. In the area of dc precision, the TLE20x7 and TLE20x7A offer maximum offset voltages of 100 µV and 25 µV, respectively, common-mode rejection ratio of 131 dB (typ), supply voltage rejection ratio of 144 dB (typ), and dc gain of 45 V/µV (typ). The ac performance of the TLE2027 and TLE2037 is highlighted by a typical unity-gain bandwidth specification of 15 MHz, 55° of phase margin, and noise voltage specifications of 3.3 nV/ Hz and 2.5 nV/ Hz at frequencies of 10 Hz and 1 kHz respectively. The TLE2037 and TLE2037A have been decompensated for faster slew rate (–7.5 V/µs, typical) and wider bandwidth (50 MHz). To ensure stability, the TLE2037 and TLE2037A should be operated with a closed-loop gain of 5 or greater. Both the TLE20x7 and TLE20x7A are available in a wide variety of packages, including the industry-standard 8-pin small-outline version for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 105°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

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技术参数

电源
Input bias current (max) (pA)90000
Input common mode headroom (to negative supply) (typ) (V)2
Input common mode headroom (to positive supply) (typ) (V)-2
Iq per channel (typ) (mA)3.8
Number of channels1
Output swing headroom (to negative supply) (typ) (V)1.5
Output swing headroom (to positive supply) (typ) (V)-1.8
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)8
交流 / 直流特性
CMRR (typ) (dB)131
Offset drift (typ) (µV/°C)0.2
Slew rate (typ) (V/µs)2.8
THD + N at 1 kHz (typ) (%)0.002
Vos (offset voltage at 25°C) (max) (mV)0.025
环境与封装
Operating temperature range (°C)-55 to 125
其他
ArchitectureBipolar
GBW (typ) (MHz)13
Iout (typ) (A)0.035
Rail-to-railNo
RatingAutomotive
Vn at 1 kHz (typ) (nV√Hz)2.5

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技术资料