The TLV522 500 nA dual, nanopower op amp offers optimum price performance in TIs nanopower family of operational amplifiers. The TLV522 provides 8 kHz of gain bandwidth from 500 nA of quiescent current, making it well suited for battery powered applications found in building automation and remote sensing nodes. Its CMOS input stage enables very low I BIAS , reducing errors commonly introduced in Megaohm feedback resistance topologies such as high-impedance photodiode and charge sense applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from sources like mobile phones, WiFi, radio transmitters and RFID readers. The TLV522 is offered in the 8-pin VSSOP (MSOP) package, and operates from –40°C to 125°C.
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| 电源 | |
|---|---|
| Input common mode headroom (to negative supply) (typ) (V) | 0.0008 |
| Input common mode headroom (to positive supply) (typ) (V) | 0.0005 |
| Iq per channel (typ) (mA) | 0.0005 |
| Number of channels | 2 |
| Output swing headroom (to negative supply) (typ) (V) | 0.002 |
| Output swing headroom (to positive supply) (typ) (V) | -0.003 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 5.5 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 1.7 |
| 交流 / 直流特性 | |
| CMRR (typ) (dB) | 90 |
| Offset drift (typ) (µV/°C) | 1.5 |
| Slew rate (typ) (V/µs) | 0.0037 |
| Vos (offset voltage at 25°C) (max) (mV) | 4 |
| 环境与封装 | |
| Operating temperature range (°C) | -40 to 125 |
| 其他 | |
| Architecture | CMOS |
| Features | Cost Optimized, EMI Hardened |
| GBW (typ) (MHz) | 0.008 |
| Iout (typ) (A) | 0.005 |
| Rail-to-rail | In, Out |
| Rating | Catalog |
| Vn at 1 kHz (typ) (nV√Hz) | 300 |