1. VBBD7322 Product Introduction VBBD7322 is a high-performance single N-channel MOSFET in a compact DFN8(3x2)-B package. This MOSFET is designed for efficient switching applications and has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. VBBD7322 uses advanced Trench technology with a threshold voltage (Vth) of 1.5V. At a gate-source voltage of 4.5V, its on-resistance is 19mΩ, while at a gate-source voltage of 10V, the on-resistance is reduced to 16mΩ. This MOSFET supports a continuous drain current (ID) of up to 9A, which is very suitable for applications requiring efficient switching and low conduction losses.
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| 环境与封装 | |
|---|---|
| VB Package | DFN8(3X2)-B |
| 其他 | |
| Configuration | Single-N |
| ID(A) | 9A |
| Rds10 | 16(mΩ) |
| Rds4.5 | 19(mΩ) |
| Technology | Trench |
| VDS(V) | 30V |
| VGS | 20V（±V） |
| Vthyp（V） | 1.5V |