VBGL1105

VBGL1105

在产单 FET,MOSFET

The VBGL1105 is a single-channel N-type MOSFET with a 100V saturated drain-source voltage and a standard ±20V gate-source voltage range. The threshold voltage is 3V, and the drain-source on-resistance is 4mΩ when the gate-source voltage is 10V. The maximum drain current is 125A, using SGT technology, and the package is TO263.

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技术参数

环境与封装
VB PackageTO263
其他
ConfigurationSingle-N
ID(A)125A
Rds104(mΩ)
TechnologySGT
VDS(V)100V
VGS20(±V)
Vthyp(V)3V

器件图片

技术资料