Product introduction: VBsemi's VBMB185R04 model is a Single N-type power field effect transistor (MOSFET) packaged in TO220F. The device is manufactured using Plannar technology for excellent performance and reliability. Its key features include a rated drain-source voltage (VDS) of 850V, a maximum drain current (ID) of 4A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 2700mΩ at VGS=10V.
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| 环境与封装 | |
|---|---|
| VB Package | TO220F |
| 其他 | |
| Configuration | Single-N |
| ID(A) | 4A |
| Rds10 | 2700 (mΩ) |
| Technology | Plannar |
| VDS(V) | 850V |
| VGS | 30（±V） |
| Vthyp（V） | 3.5V |