**Application Introduction:** VBMB2255M is a single P-type field effect transistor with excellent performance parameters and reliability. Its maximum negative pressure value reaches -250V, which is suitable for applications in various negative pressure working environments. Under different gate-source voltages, the on-resistance shows stable characteristics, respectively 600mΩ (at 4.5V) and 500mΩ (at 10V), which can meet the needs of different circuit designs. In addition, the maximum drain current reaches -10A, enabling stable operation under high load conditions.
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| 环境与封装 | |
|---|---|
| VB Package | TO220F |
| 其他 | |
| Configuration | Single-P |
| ID(A) | -10A |
| Rds10 | 500 (mΩ) |
| Rds4.5 | 600 (mΩ) |
| Technology | Trench |
| VDS(V) | -250V |
| VGS | 20（±V） |
| Vthyp（V） | -3V |