全部替代型号
查看完整报告技术参数
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 600mA |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 2W |
| 环境与封装 | |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | - |
| Supplier Device Package | - |
| 其他 | |
| Base Product Number | VQ2001 |
| FET Feature | Standard |
| FET Type | 4 P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 15V |
| Mfr | Vishay Siliconix |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1A, 12V |
| Series | - |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |