类型DRAM
容量4 Gbit
接口并口
供电电压1.14 ~ 1.3 V
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类型DRAM
容量4 Gbit
接口并口
供电电压1.14 ~ 1.3 V
时钟频率933 MHz最大
| 电源 | |
|---|---|
| Voltage - Supply | 1.14V ~ 1.3V, 1.7V ~ 1.95V |
| 交流 / 直流特性 | |
| Clock Frequency | 933 MHz |
| 环境与封装 | |
| Memory Size | 4Gbit |
| Mounting Type | Surface Mount |
| Operating Temperature | -25°C~85°C(TC) |
| Package | Tray |
| Package / Case | 178-VFBGA |
| Supplier Device Package | 178-VFBGA (11x11.5) |
| 其他 | |
| Base Product Number | W63CH6 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 256M x 16 |
| Memory Type | Volatile |
| Mfr | Winbond Electronics |
| Product Status | Obsolete |
| Series | - |
| Technology | SDRAM - Mobile LPDDR3 |
| Write Cycle Time - Word, Page | 15ns |