ZXMS6006DN8
在产60V Dual N-Channel Self-Protected Enhancement Mode IntelliFET MOSFET
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| 环境与封装 | |
|---|---|
| AEC Qualified | No |
| 其他 | |
| B VDSS (V) | 60 |
| Compliance (Only Automotive Supports PPAP) | Standard |
| Configuration | Dual |
| EAS (mJ) | 210 |
| I D V IN = 5V (A) | 2.8 |
| P D (W) | 1.67 |
| Polarity | N |
| R DS(ON) Max @ V IN (10V) (mΩ) | - |
| R DS(ON) Max @ V IN (3V) (mΩ) | 125 |
| R DS(ON) Max @V IN (5V) (mΩ) | 100 |
| TAB | - |
| T J (°C) | 150 |
| V DS(SC) V IN = 5V (V) | 16 |