搜索结果:bvs
共 50+ 条- 匹配型号50+
- 有数据手册(前 50 条中)40
- 涉及品牌(前 50 条中)9
产品搜索结果共 50+ 条
| 对比 | 产品型号 | 品牌 | 分类 | 产品描述 | 技术资料 | 替代 | 操作 |
|---|---|---|---|---|---|---|---|
| 片式电阻器 - 表面安装 | 2-terminal resistor made of composite material. 0.0001–0.005 Ohm, 2.5–12 W, 1–5 % tolerance. Compact for current sensing. | 数据手册1 | 查看详情 | ||||
| 数据手册1 | 查看详情 | ||||||
| 单 FET,MOSFET | MOSFET P-CH 50V 130MA SOT23-3 | 查看详情 | |||||
| 晶体管 - FET,MOSFET - 单 | MOSFET P-CH 50V 130MA SOT23-3 | 查看详情 | |||||
| 单 FET,MOSFET | MOSFET P-CH 50V 130MA SOT-23-3 | 查看详情 | |||||
| 晶体管 - FET,MOSFET - 单 | MOSFET P-CH 50V 130MA SOT-23-3 | 查看详情 | |||||
| 晶体管 - FET,MOSFET - 单 | MOSFET N-CH 100V 170MA SOT23-3 | 数据手册2 | 查看详情 | ||||
| 晶体管 - FET,MOSFET - 单 | MOSFET N-CH 50V 200MA SOT23-3 | 数据手册2 | 查看详情 | ||||
| 晶体管 - FET,MOSFET - 单 | MOSFET N-CH 50V 200MA SOT-23-3 | 数据手册2 | 查看详情 | ||||
| 数据手册1 | 查看详情 | ||||||
| 数据手册1 | 查看详情 | ||||||
| 数据手册3 | 查看详情 | ||||||
| 单 FET,MOSFET | Automotive Power MOSFET ideal for low power applications. 100V, 170mA, 6 Ohm, Single N-Channel, SOT-23. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. Product services, tools and other useful resources related to BVSS123L Find and compare products, get support and connect with onsemi sales team. Note: The temperature and confidence level may be adjusted to your requirements. Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.) | 数据手册3 | 查看详情 | ||||
| 数据手册3 | 查看详情 | ||||||
| 电气、专用熔断器 | 10KA TVSS LIMITER 100 PACK | 查看详情 | |||||
| 电气、专用熔断器 | 10KA TVSS LIMITER WITH LEADS 100 | 查看详情 | |||||
| 电气、专用熔断器 | 10KA TVSS LIMITER 10 PACK | 查看详情 | |||||
| 电气、专用熔断器 | 10KA TVSS LIMITER WITH LEADS 10 | 查看详情 | |||||
| 单 FET,MOSFET | MOSFET N-CH 50V 200MA SOT23-3 | 数据手册2 | 查看详情 | ||||
| 晶体管 - FET,MOSFET - 单 | MOS管 类型:N沟道 漏源电压(Vdss):55V 连续漏极电流(Id):0.3A 功率(Pd):0.35W 导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,0.2A 阈值电压(Vgs(th)@Id):0.8V-1.6V@250uA | 数据手册5 | 查看详情 |
没找到想要的型号?
让 AI 帮你联网查找,或者直接告诉客服。
申请芯片样品
填写型号和样品需求,供样安排确认后会联系你。