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Cross references for
IV1D12010O2
Original
IN
Inventchip
IV1D12010O2
Capacitance @ Vr, F
575pF @ 1V, 1MHz
Current - Average Rectified (Io)
28A
Current - Reverse Leakage @ Vr
50 µA @ 1200 V
Diode Type
Silicon Carbide Schottky
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