GeneSiC SemiconductorUnited States
DIODE GEN PURP 50V 6A DO4
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View full reportTechnical parameters
Key specs
Reverse voltage50 V
Average rectified current6 A
Forward voltage1.4 VMax · 6 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 6A |
| Current - Reverse Leakage @ Vr | 15 µA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 6 A |
| Environment and package | |
| Mounting Type | Chassis, Stud Mount |
| Operating Temperature - Junction | -65°C~150°C |
| Package | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Supplier Device Package | DO-4 |
| Other | |
| Base Product Number | 1N3879 |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 200 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |