Rohm SemiconductorJapan
DIODE GEN PURP 80V 100MA VMN2
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View full reportTechnical parameters
Key specs
Reverse voltage80 V
Average rectified current100 mA
Forward voltage1.2 VMax · 100 mA
TypeStandardSmall Signal =< 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 100mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 80 V |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150°C(Max) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | SOD-923 |
| Supplier Device Package | VMN2 |
| Other | |
| Base Product Number | 1SS400 |
| Capacitance @ Vr, F | 3pF @ 500mV, 1MHz |
| Diode Type | Standard |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Reverse Recovery Time (trr) | 4 ns |
| Series | Automotive, AEC-Q101 |
| Speed | Small Signal =< 200mA (Io), Any Speed |
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