Microchip TechnologyUnited States
NPN TRANSISTOR
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage40 V
DC current gain40150mA
Power600 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| Power - Max | 600 mW |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C~200°C(TJ) |
| Package | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Other | |
| Base Product Number | 2N697 |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |