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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
Collector current1.5 AMax
DC current gain10001A
Power1 WMax
Power
Current - Collector Cutoff (Max)200nA
Current - Collector (Ic) (Max)1.5 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 5V
Frequency - Transition200MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-226-3
Other
Base Product Number2N7053
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA

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